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Introduction to Rf Power Amplifier Design and Simulation

$ 7,812 元 原價 8,680
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Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metalxideemiconductor field-effect transistorsDetails active device modeling techniques for transistors and parasitic extraction methods for active devicesExplores network and scattering parameters, resonators, matching networks, and tools such as the Smith chartCovers power-sensing devices including four-port directional couplers and new types of reflectometersPresents RF filter designs for power amplifiers as well as application examples of special filter typesDemonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniquesBlending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

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